Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy.

Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy.

We have studied the photoluminescence properties of GaN nanorods grown on Si(111) substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The hexagonal shaped nanorods with lateral average diameters from 30 to 150 nm are obtained by controlling the Ga flux with a fixed amount of nitrog...

書誌詳細
主要な著者:	Park, Y, Kang, T, Taylor, R
フォーマット:	Journal article
言語:	English
出版事項:	2008

類似資料

GaN nanorods grown on Si (111) substrates and exciton localization.
著者:: Park, Y, 等
出版事項: (2011)

The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy
著者:: Park, Y, 等
出版事項: (2006)

GaN nanorods grown on Si (111) substrates and exciton localization
著者:: Park, Y, 等
出版事項: (2011)

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
著者:: Na, J, 等
出版事項: (2005)

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
著者:: Na, J, 等
出版事項: (2005)

Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
著者:: L, S Chuah, 等
出版事項: (2007)

Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)
著者:: Ravikiran, L., 等
出版事項: (2014)

Photoluminescence properties of a single GaN nanorod with GaN/AlGaN multilayer quantum disks
著者:: Yi, SN, 等
出版事項: (2007)

Micro- and Time-resolved Photoluminescence in GaN Nanorods with Different Diameters
著者:: Park, Y, 等
出版事項: (2010)

Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
著者:: Agrawal, M., 等
出版事項: (2013)

Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
著者:: Park, Y, 等
出版事項: (2010)

Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy
著者:: Ng, T. K., 等
出版事項: (2013)

Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
著者:: Li, He Ming.
出版事項: (2009)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
著者:: Park, Y, 等
出版事項: (2018)

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy
著者:: Dharmarasu, Nethaji, 等
出版事項: (2013)

Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy
著者:: Ravikiran Lingaparthi
出版事項: (2015)

Properties of selective-area-growth GaN grown on various buffered Si(111) substrates by HVPE
著者:: Shin, D, 等
出版事項: (2007)

Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy
著者:: Lingaparthi, R., 等
出版事項: (2022)

Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy
著者:: Huo, Lili, 等
出版事項: (2023)

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
著者:: Park, Y, 等
出版事項: (2018)

Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy
著者:: Bae, M, 等
出版事項: (2006)

Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy
著者:: Agrawal, Manvi, 等
出版事項: (2017)

The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy
著者:: Smith, Frank William
出版事項: (2005)

Sequential tunnelling in GaAs/AIGaAs superlattices grown by molecular beam epitaxy
著者:: Han, Zhiyong.
出版事項: (2008)

Photoluminescence studies of the formation of MgS/CdSe quantum dots grown by molecular beam epitaxy
著者:: Funato, M, 等
出版事項: (2002)

A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
著者:: Zheng, Y., 等
出版事項: (2020)

Effects of Surface Recombination on Exciton Dynamics in GaN Nanorods
著者:: Park, Y, 等
出版事項: (2009)

Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs
著者:: Bablu K. Ghosh, 等
出版事項: (2003)

Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source
著者:: Wang, S. Z., 等
出版事項: (2013)

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy
著者:: Ravikiran, L., 等
出版事項: (2015)

Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale
著者:: Chan, C, 等
出版事項: (2013)

Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
著者:: Whiteside, Matthew, 等
出版事項: (2021)

Studies on plasma assisted molecular beam epitaxial growth of GaN-based multilayer heterostructures on Si for photodetector application
著者:: Zheng, Yi
出版事項: (2019)

Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
著者:: Tyan, S, 等
出版事項: (2000)

Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy
著者:: Huo, Lili, 等
出版事項: (2025)

Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method
著者:: Quang, Hong Le, 等
出版事項: (2004)

Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE
著者:: Sun, Z. Z., 等
出版事項: (2011)

Structural and magnetic order in MnAs films grown by molecular beam epitaxy on GaAs for spin injection
著者:: Daweritz, L, 等
出版事項: (2003)

Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy
著者:: D'Costa, Vijay Richard, 等
出版事項: (2015)

Characterisation of compound semiconductors grown by molecular beam epitaxy
著者:: Zhang, Peng Hua
出版事項: (2009)