The properties of nitrogen and oxygen in silicon
A novel dislocation locking technique is used to study the behaviour of nitrogen and oxygen in silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen or oxygen diffuses to the dislocations. The str...
Egile Nagusiak: | , |
---|---|
Beste egile batzuk: | |
Formatua: | Thesis |
Hizkuntza: | English |
Argitaratua: |
2006
|
Gaiak: |