The properties of nitrogen and oxygen in silicon

A novel dislocation locking technique is used to study the behaviour of nitrogen and oxygen in silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen or oxygen diffuses to the dislocations. The str...

Deskribapen osoa

Xehetasun bibliografikoak
Egile Nagusiak: Murphy, J, John Douglas Murphy
Beste egile batzuk: Wilshaw, P
Formatua: Thesis
Hizkuntza:English
Argitaratua: 2006
Gaiak: