The properties of nitrogen and oxygen in silicon

A novel dislocation locking technique is used to study the behaviour of nitrogen and oxygen in silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen or oxygen diffuses to the dislocations. The str...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Murphy, J, John Douglas Murphy
Muut tekijät: Wilshaw, P
Aineistotyyppi: Opinnäyte
Kieli:English
Julkaistu: 2006
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