The properties of nitrogen and oxygen in silicon
A novel dislocation locking technique is used to study the behaviour of nitrogen and oxygen in silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen or oxygen diffuses to the dislocations. The str...
| Päätekijät: | , |
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| Muut tekijät: | |
| Aineistotyyppi: | Opinnäyte |
| Kieli: | English |
| Julkaistu: |
2006
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| Aiheet: |