The properties of nitrogen and oxygen in silicon
A novel dislocation locking technique is used to study the behaviour of nitrogen and oxygen in silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen or oxygen diffuses to the dislocations. The str...
| Glavni autori: | , |
|---|---|
| Daljnji autori: | |
| Format: | Disertacija |
| Jezik: | English |
| Izdano: |
2006
|
| Teme: |