The properties of nitrogen and oxygen in silicon
A novel dislocation locking technique is used to study the behaviour of nitrogen and oxygen in silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen or oxygen diffuses to the dislocations. The str...
| Главные авторы: | , |
|---|---|
| Другие авторы: | |
| Формат: | Диссертация |
| Язык: | English |
| Опубликовано: |
2006
|
| Предметы: |