The properties of nitrogen and oxygen in silicon

A novel dislocation locking technique is used to study the behaviour of nitrogen and oxygen in silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen or oxygen diffuses to the dislocations. The str...

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Bibliografske podrobnosti
Main Authors: Murphy, J, John Douglas Murphy
Drugi avtorji: Wilshaw, P
Format: Thesis
Jezik:English
Izdano: 2006
Teme: