The properties of nitrogen and oxygen in silicon
A novel dislocation locking technique is used to study the behaviour of nitrogen and oxygen in silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen or oxygen diffuses to the dislocations. The str...
| Huvudupphovsmän: | , |
|---|---|
| Övriga upphovsmän: | |
| Materialtyp: | Lärdomsprov |
| Språk: | English |
| Publicerad: |
2006
|
| Ämnen: |