Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.
Semiconductor nanopyramids (NPs) provide advantages in the development of novel functional optoelectronic devices due to their unique size-dependent properties. Here we demonstrate a new method for the fabrication of selectively self-assembled single-crystalline GaN NPs on the m-plane of periodicall...
| Principais autores: | , , , , , , |
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| Formato: | Journal article |
| Idioma: | English |
| Publicado em: |
2012
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