Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.

Semiconductor nanopyramids (NPs) provide advantages in the development of novel functional optoelectronic devices due to their unique size-dependent properties. Here we demonstrate a new method for the fabrication of selectively self-assembled single-crystalline GaN NPs on the m-plane of periodicall...

Полное описание

Библиографические подробности
Главные авторы: Park, Y, Holmes, M, Taylor, R, Kim, K, Lee, S, Ju, H, Im, H
Формат: Journal article
Язык:English
Опубликовано: 2012