Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.
Semiconductor nanopyramids (NPs) provide advantages in the development of novel functional optoelectronic devices due to their unique size-dependent properties. Here we demonstrate a new method for the fabrication of selectively self-assembled single-crystalline GaN NPs on the m-plane of periodicall...
मुख्य लेखकों: | Park, Y, Holmes, M, Taylor, R, Kim, K, Lee, S, Ju, H, Im, H |
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स्वरूप: | Journal article |
भाषा: | English |
प्रकाशित: |
2012
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समान संसाधन
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Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (vol 23, 405602, 2012)
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Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
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Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
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प्रकाशित: (2014) -
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
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