Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry
At present there is no quick and simple method to determine the type and orientation of grains in multicrystalline silicon, which is commonly used for photovoltaic applications. In this paper, a novel method for performing such measurements is described. A laser beam is reflected off an anisotropica...
Main Authors: | , , |
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Format: | Journal article |
Language: | English |
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2010
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author | Wang, Y Murphy, J Wilshaw, P |
author_facet | Wang, Y Murphy, J Wilshaw, P |
author_sort | Wang, Y |
collection | OXFORD |
description | At present there is no quick and simple method to determine the type and orientation of grains in multicrystalline silicon, which is commonly used for photovoltaic applications. In this paper, a novel method for performing such measurements is described. A laser beam is reflected off an anisotropically etched multicrystalline silicon surface. An optimized KOH-based etch produces defined facets with {001}, {111}, {113}, ∼{133}, and ∼{335} orientations. Reflections from the different facets then produce spots in a reflection pattern produced on a suitably placed screen. The pattern produced is characteristic of the grain type, with {001}-, {110}-, and {111}-type grains being clearly distinguished in over 90% of the cases. An analysis of the position of the spots allows the orientation of the facets producing them to be determined. These orientations are used to determine the orientations of the underlying grain to within ∼6° relative to measurements made by electron backscatter diffraction. An algorithm has been developed, which automates this quantification of grain orientation with a success rate of ∼90% on {001} and {110}-type grains. © 2010 The Electrochemical Society. |
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format | Journal article |
id | oxford-uuid:d9650d72-e4b7-41ca-9cc2-a03d9a8c05ec |
institution | University of Oxford |
language | English |
last_indexed | 2024-03-07T05:04:22Z |
publishDate | 2010 |
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spelling | oxford-uuid:d9650d72-e4b7-41ca-9cc2-a03d9a8c05ec2022-03-27T08:55:49ZDetermination of Grain Orientations in Multicrystalline Silicon by ReflectometryJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:d9650d72-e4b7-41ca-9cc2-a03d9a8c05ecEnglishSymplectic Elements at Oxford2010Wang, YMurphy, JWilshaw, PAt present there is no quick and simple method to determine the type and orientation of grains in multicrystalline silicon, which is commonly used for photovoltaic applications. In this paper, a novel method for performing such measurements is described. A laser beam is reflected off an anisotropically etched multicrystalline silicon surface. An optimized KOH-based etch produces defined facets with {001}, {111}, {113}, ∼{133}, and ∼{335} orientations. Reflections from the different facets then produce spots in a reflection pattern produced on a suitably placed screen. The pattern produced is characteristic of the grain type, with {001}-, {110}-, and {111}-type grains being clearly distinguished in over 90% of the cases. An analysis of the position of the spots allows the orientation of the facets producing them to be determined. These orientations are used to determine the orientations of the underlying grain to within ∼6° relative to measurements made by electron backscatter diffraction. An algorithm has been developed, which automates this quantification of grain orientation with a success rate of ∼90% on {001} and {110}-type grains. © 2010 The Electrochemical Society. |
spellingShingle | Wang, Y Murphy, J Wilshaw, P Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry |
title | Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry |
title_full | Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry |
title_fullStr | Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry |
title_full_unstemmed | Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry |
title_short | Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry |
title_sort | determination of grain orientations in multicrystalline silicon by reflectometry |
work_keys_str_mv | AT wangy determinationofgrainorientationsinmulticrystallinesiliconbyreflectometry AT murphyj determinationofgrainorientationsinmulticrystallinesiliconbyreflectometry AT wilshawp determinationofgrainorientationsinmulticrystallinesiliconbyreflectometry |