Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry

At present there is no quick and simple method to determine the type and orientation of grains in multicrystalline silicon, which is commonly used for photovoltaic applications. In this paper, a novel method for performing such measurements is described. A laser beam is reflected off an anisotropica...

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Main Authors: Wang, Y, Murphy, J, Wilshaw, P
Format: Journal article
Language:English
Published: 2010
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author Wang, Y
Murphy, J
Wilshaw, P
author_facet Wang, Y
Murphy, J
Wilshaw, P
author_sort Wang, Y
collection OXFORD
description At present there is no quick and simple method to determine the type and orientation of grains in multicrystalline silicon, which is commonly used for photovoltaic applications. In this paper, a novel method for performing such measurements is described. A laser beam is reflected off an anisotropically etched multicrystalline silicon surface. An optimized KOH-based etch produces defined facets with {001}, {111}, {113}, ∼{133}, and ∼{335} orientations. Reflections from the different facets then produce spots in a reflection pattern produced on a suitably placed screen. The pattern produced is characteristic of the grain type, with {001}-, {110}-, and {111}-type grains being clearly distinguished in over 90% of the cases. An analysis of the position of the spots allows the orientation of the facets producing them to be determined. These orientations are used to determine the orientations of the underlying grain to within ∼6° relative to measurements made by electron backscatter diffraction. An algorithm has been developed, which automates this quantification of grain orientation with a success rate of ∼90% on {001} and {110}-type grains. © 2010 The Electrochemical Society.
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spelling oxford-uuid:d9650d72-e4b7-41ca-9cc2-a03d9a8c05ec2022-03-27T08:55:49ZDetermination of Grain Orientations in Multicrystalline Silicon by ReflectometryJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:d9650d72-e4b7-41ca-9cc2-a03d9a8c05ecEnglishSymplectic Elements at Oxford2010Wang, YMurphy, JWilshaw, PAt present there is no quick and simple method to determine the type and orientation of grains in multicrystalline silicon, which is commonly used for photovoltaic applications. In this paper, a novel method for performing such measurements is described. A laser beam is reflected off an anisotropically etched multicrystalline silicon surface. An optimized KOH-based etch produces defined facets with {001}, {111}, {113}, ∼{133}, and ∼{335} orientations. Reflections from the different facets then produce spots in a reflection pattern produced on a suitably placed screen. The pattern produced is characteristic of the grain type, with {001}-, {110}-, and {111}-type grains being clearly distinguished in over 90% of the cases. An analysis of the position of the spots allows the orientation of the facets producing them to be determined. These orientations are used to determine the orientations of the underlying grain to within ∼6° relative to measurements made by electron backscatter diffraction. An algorithm has been developed, which automates this quantification of grain orientation with a success rate of ∼90% on {001} and {110}-type grains. © 2010 The Electrochemical Society.
spellingShingle Wang, Y
Murphy, J
Wilshaw, P
Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry
title Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry
title_full Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry
title_fullStr Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry
title_full_unstemmed Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry
title_short Determination of Grain Orientations in Multicrystalline Silicon by Reflectometry
title_sort determination of grain orientations in multicrystalline silicon by reflectometry
work_keys_str_mv AT wangy determinationofgrainorientationsinmulticrystallinesiliconbyreflectometry
AT murphyj determinationofgrainorientationsinmulticrystallinesiliconbyreflectometry
AT wilshawp determinationofgrainorientationsinmulticrystallinesiliconbyreflectometry