Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
Carrier localization in InGaN/GaN multiple-quantum wells (MQWs) with three different well thicknesses was investigated optically using time-integrated and time-resolved microphotoluminescence spectroscopy. An anomalous temperature dependence of the photoluminescence peak energy was observed, as a co...
| Asıl Yazarlar: | , , , , , , , , , |
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| Materyal Türü: | Journal article |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
American Institute of Physics
2006
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| Konular: |