Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
Carrier localization in InGaN/GaN multiple-quantum wells (MQWs) with three different well thicknesses was investigated optically using time-integrated and time-resolved microphotoluminescence spectroscopy. An anomalous temperature dependence of the photoluminescence peak energy was observed, as a co...
| Main Authors: | , , , , , , , , , |
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| Formato: | Journal article |
| Idioma: | English |
| Publicado em: |
American Institute of Physics
2006
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| Assuntos: |
| _version_ | 1826299824401547264 |
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| author | Na, J Taylor, R Lee, K Wang, T Tahraoui, A Fox, A Yi, S Park, Y Choi, J Lee, J |
| author_facet | Na, J Taylor, R Lee, K Wang, T Tahraoui, A Fox, A Yi, S Park, Y Choi, J Lee, J |
| author_sort | Na, J |
| collection | OXFORD |
| description | Carrier localization in InGaN/GaN multiple-quantum wells (MQWs) with three different well thicknesses was investigated optically using time-integrated and time-resolved microphotoluminescence spectroscopy. An anomalous temperature dependence of the photoluminescence peak energy was observed, as a consequence of local potential fluctuations. The carrier localization was more prominent in the case of MQWs with wide well thickness. The results indicate that the degree of potential fluctuation increases with increasing well thickness. Emission from quantum-dot-like states only became apparent in MQWs with wide well thickness, which supports the assertion that carrier localization in InGaN/GaN MQWs is due to the formation of quantum dots. |
| first_indexed | 2024-03-07T05:07:49Z |
| format | Journal article |
| id | oxford-uuid:da889742-736b-45a5-a784-ccac013e75e5 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T05:07:49Z |
| publishDate | 2006 |
| publisher | American Institute of Physics |
| record_format | dspace |
| spelling | oxford-uuid:da889742-736b-45a5-a784-ccac013e75e52022-03-27T09:03:53ZDependence of carrier localization in InGaN/GaN multiple-quantum wells on well thicknessJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:da889742-736b-45a5-a784-ccac013e75e5Condensed Matter PhysicsPhysicsEnglishOxford University Research Archive - ValetAmerican Institute of Physics2006Na, JTaylor, RLee, KWang, TTahraoui, AFox, AYi, SPark, YChoi, JLee, JCarrier localization in InGaN/GaN multiple-quantum wells (MQWs) with three different well thicknesses was investigated optically using time-integrated and time-resolved microphotoluminescence spectroscopy. An anomalous temperature dependence of the photoluminescence peak energy was observed, as a consequence of local potential fluctuations. The carrier localization was more prominent in the case of MQWs with wide well thickness. The results indicate that the degree of potential fluctuation increases with increasing well thickness. Emission from quantum-dot-like states only became apparent in MQWs with wide well thickness, which supports the assertion that carrier localization in InGaN/GaN MQWs is due to the formation of quantum dots. |
| spellingShingle | Condensed Matter Physics Physics Na, J Taylor, R Lee, K Wang, T Tahraoui, A Fox, A Yi, S Park, Y Choi, J Lee, J Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness |
| title | Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness |
| title_full | Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness |
| title_fullStr | Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness |
| title_full_unstemmed | Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness |
| title_short | Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness |
| title_sort | dependence of carrier localization in ingan gan multiple quantum wells on well thickness |
| topic | Condensed Matter Physics Physics |
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