The properties of nitrogen in silicon
The behaviour of nitrogen in silicon is investigated using the dislocation unlocking technique. Specimens containing well-ordered arrays of dislocations are isothermally annealed for a controlled duration, during which nitrogen segregates to and pins the dislocations. The stress required to unlock t...
Autors principals: | Alpass, C, Charles Alpass |
---|---|
Altres autors: | Wilshaw, P |
Format: | Thesis |
Idioma: | English |
Publicat: |
2008
|
Matèries: |
Ítems similars
-
Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals
per: Giannattasio, A
Publicat: (2004) -
Epitaxial silicon technology/
per: Baliga, B. Jayant
Publicat: (1986) -
Amorphous and polycrystalline thin-film silicon science and technology--2012 : symposium held April 9-13, 2012, San Francisco, California, U.S.A. /
per: Symposium A, "Amorphous and Polycrystalline Thin Film Silicon Science and Technology" (2012 : San Francisco, Calif.), et al.
Publicat: ( c20) -
Film silicon science and technology : symposium held April 1-5, 2013, San Francisco, California, U.S.A. /
per: Film Silicon Science and Technology (Symposium) (2013 : San Francisco, Calif.), et al.
Publicat: (2013) -
Silicon semiconductor technology /
per: 414968 Runyan, Walter R.
Publicat: (1965)