Electrical and structural analysis of high-dose Si implantation in GaN

Eitemau Tebyg

• TEM investigations of Si ion-implanted GaN
  gan: Zou, J, et al.
  Cyhoeddwyd: (1998)
• Damage to epitaxial GaN layers by silicon implantation
  gan: Tan, H, et al.
  Cyhoeddwyd: (1996)
• Ion implantation processing of GaN epitaxial layers
  gan: Tan, H, et al.
  Cyhoeddwyd: (1996)
• Annealing of ion implanted gallium nitride
  gan: Tan, H, et al.
  Cyhoeddwyd: (1998)
• AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
  gan: Justinas Jorudas, et al.
  Cyhoeddwyd: (2020-12-01)