Electrical and structural analysis of high-dose Si implantation in GaN
Main Authors: | Zolper, J, Tan, H, Williams, J, Zou, J, Cockayne, D, Pearton, S, Crawford, M, Karlicek, R |
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Format: | Journal article |
Udgivet: |
1997
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Lignende værker
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TEM investigations of Si ion-implanted GaN
af: Zou, J, et al.
Udgivet: (1998) -
Damage to epitaxial GaN layers by silicon implantation
af: Tan, H, et al.
Udgivet: (1996) -
Ion implantation processing of GaN epitaxial layers
af: Tan, H, et al.
Udgivet: (1996) -
Annealing of ion implanted gallium nitride
af: Tan, H, et al.
Udgivet: (1998) -
AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
af: Justinas Jorudas, et al.
Udgivet: (2020-12-01)