Electrical and structural analysis of high-dose Si implantation in GaN

Electrical and structural analysis of high-dose Si implantation in GaN

Detalhes bibliográficos
Principais autores:	Zolper, J, Tan, H, Williams, J, Zou, J, Cockayne, D, Pearton, S, Crawford, M, Karlicek, R
Formato:	Journal article
Publicado em:	1997

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