An enhanced alneal process to produce SRV <1 cm/s in 1Ωcm n-type Si
The alneal is one of the most effective methods of electrically passivating a silicon surface, and has been used by numerous research groups since the 1980s. In this work, we present an enhanced alneal process that substantially improves its effectiveness. Previously, the success afforded by the sta...
| Päätekijät: | , , , , , , |
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| Aineistotyyppi: | Journal article |
| Julkaistu: |
Elsevier
2017
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