An enhanced alneal process to produce SRV <1 cm/s in 1Ωcm n-type Si
The alneal is one of the most effective methods of electrically passivating a silicon surface, and has been used by numerous research groups since the 1980s. In this work, we present an enhanced alneal process that substantially improves its effectiveness. Previously, the success afforded by the sta...
Asıl Yazarlar: | Collett, K, Bonilla Osorio, R, Hamer, P, Bourret-Sicotte, G, Lobo, R, Kho, T, Wilshaw, P |
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Materyal Türü: | Journal article |
Baskı/Yayın Bilgisi: |
Elsevier
2017
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Benzer Materyaller
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An enhanced alneal process to produce SRV < 1cm/s in 1 Ohmcm in n-type Si: data
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Extremely low surface recombination in 1 Ω cm n-type monocrystalline silicon
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Surface passivation provided by an alneal through sio2/tio2 bilayer
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Data for 'Extremely low surface recombination in 1 Ωcm n-type monocrystalline silicon'
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Data used in "Surface Passivation Provided By An Alneal Through SiO2/TiO2 Bilayer"
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