GaN nanorods grown on Si (111) substrates and exciton localization.

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basa...

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Bibliographic Details
Main Authors: Park, Y, Holmes, M, Shon, Y, Yoon, I, Im, H, Taylor, R
Format: Journal article
Language:English
Published: 2011