RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAAS
We report photoluminescence and Raman scattering measurements of periodically δ-doped Si : GaAs. The spectra of short-period structures are similar to those of uniformly doped material, but new lines appear in the Raman spectra of longer-period structures that arise from inter-subband transitions be...
| Main Authors: | , , , , , , |
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| Format: | Conference item |
| Published: |
1990
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