RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAAS
We report photoluminescence and Raman scattering measurements of periodically δ-doped Si : GaAs. The spectra of short-period structures are similar to those of uniformly doped material, but new lines appear in the Raman spectra of longer-period structures that arise from inter-subband transitions be...
| Main Authors: | , , , , , , |
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| Format: | Conference item |
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1990
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| _version_ | 1797099291290894336 |
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| author | Maciel, A Tatham, M Ryan, J Worlock, J Nahory, R Harbison, J Florez, L |
| author_facet | Maciel, A Tatham, M Ryan, J Worlock, J Nahory, R Harbison, J Florez, L |
| author_sort | Maciel, A |
| collection | OXFORD |
| description | We report photoluminescence and Raman scattering measurements of periodically δ-doped Si : GaAs. The spectra of short-period structures are similar to those of uniformly doped material, but new lines appear in the Raman spectra of longer-period structures that arise from inter-subband transitions between confined electron levels in a single δ-layer or between minibands in the δ-doping superlattice. © 1990. |
| first_indexed | 2024-03-07T05:21:42Z |
| format | Conference item |
| id | oxford-uuid:df23c188-2fe0-40d4-9696-9c8df73c2735 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T05:21:42Z |
| publishDate | 1990 |
| record_format | dspace |
| spelling | oxford-uuid:df23c188-2fe0-40d4-9696-9c8df73c27352022-03-27T09:37:16ZRAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAASConference itemhttp://purl.org/coar/resource_type/c_5794uuid:df23c188-2fe0-40d4-9696-9c8df73c2735Symplectic Elements at Oxford1990Maciel, ATatham, MRyan, JWorlock, JNahory, RHarbison, JFlorez, LWe report photoluminescence and Raman scattering measurements of periodically δ-doped Si : GaAs. The spectra of short-period structures are similar to those of uniformly doped material, but new lines appear in the Raman spectra of longer-period structures that arise from inter-subband transitions between confined electron levels in a single δ-layer or between minibands in the δ-doping superlattice. © 1990. |
| spellingShingle | Maciel, A Tatham, M Ryan, J Worlock, J Nahory, R Harbison, J Florez, L RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAAS |
| title | RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAAS |
| title_full | RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAAS |
| title_fullStr | RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAAS |
| title_full_unstemmed | RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAAS |
| title_short | RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAAS |
| title_sort | raman scattering from electronic excitations in periodically delta doped gaas |
| work_keys_str_mv | AT maciela ramanscatteringfromelectronicexcitationsinperiodicallydeltadopedgaas AT tathamm ramanscatteringfromelectronicexcitationsinperiodicallydeltadopedgaas AT ryanj ramanscatteringfromelectronicexcitationsinperiodicallydeltadopedgaas AT worlockj ramanscatteringfromelectronicexcitationsinperiodicallydeltadopedgaas AT nahoryr ramanscatteringfromelectronicexcitationsinperiodicallydeltadopedgaas AT harbisonj ramanscatteringfromelectronicexcitationsinperiodicallydeltadopedgaas AT florezl ramanscatteringfromelectronicexcitationsinperiodicallydeltadopedgaas |