Registration of single quantum dots using cryogenic laser photolithography

Registration of single quantum dots using cryogenic laser photolithography

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We have registered the position of single InGaAs quantum dots using a cryogenic laser photolithography technique. This is an important advance towards the reproducible fabrication of solid-state cavity quantum electrodynamic devices, a key requirement for commercial exploitation of quantum informati...

詳細記述

書誌詳細
主要な著者: Lee, K, Green, A, Taylor, R, Sharp, D, Scrimgeour, J, Roche, O, Na, J, Jarjour, A, Turberfield, A, Brossard, F, Williams, D, Briggs, G
フォーマット: Journal article
言語:English
出版事項: American Institute of Physics 2006
主題:
Physics
Condensed Matter Physics
その他の書誌記述
要約:We have registered the position of single InGaAs quantum dots using a cryogenic laser photolithography technique. This is an important advance towards the reproducible fabrication of solid-state cavity quantum electrodynamic devices, a key requirement for commercial exploitation of quantum information processing. The quantum dot positions were registered with an estimated accuracy of 50 nm by fabricating metal alignment markers around them. Photoluminescence spectra from quantum dots before and after marker fabrication were identical except for a small redshift (~1 nm), probably introduced during the reactive ion etching.

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