Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
The behavior of oxygen and nitrogen impurities in silicon has been investigated using a novel dislocation locking technique. The locking effect of oxygen in Czochralski silicon (CZ-Si) was investigated in the 350-850°C temperature range and was found to display five well-defined regimes as a functio...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2005
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