ONE-DIMENSIONAL TRANSPORT AND GATING OF INAS/GASB STRUCTURES
Semimetallic InAs/GaSb structures are known to contain simultaneously both two dimensional electrons in the InAs and two dimensional holes in the GaSb layers. Following successful anodisation of undoped GaSb, we describe transport measurements performed on a wide area gated sample and also a single...
| Hoofdauteurs: | , , , , , , , |
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| Formaat: | Journal article |
| Taal: | English |
| Gepubliceerd in: |
Academic Press Ltd
1994
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