The microstructure of non-polar a-plane (11 2¯0) InGaN quantum wells

The microstructure of non-polar a-plane (11 2¯0) InGaN quantum wells

Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning t...

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Bibliographic Details
Main Authors:	Griffiths, J, Oehler, F, Tang, F, Zhang, S, Fu, W, Zhu, T, Findlay, S, Zheng, C, Etheridge, J, Martin, T, Bagot, P, Moody, M, Sutherland, D, Dawson, P, Kappers, M, Humphreys, C, Oliver, R
Format:	Journal article
Published:	AIP Publishing 2016

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