Spin-polarized electronic reflections at metal-oxide interfaces
The ultra-thin oxide tunnel barrier employed in magnetic tunnel junctions stack has to be of very high quality in terms of large scale homogeneity of its thickness and height parameters. For controlling precisely oxidation kinetic, we used spin valves as an oxidation progress probe. By measuring the...
| Autors principals: | , , , , , |
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| Format: | Conference item |
| Publicat: |
2002
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