Electron beam induced current investigations of transition metal impurities at extended defects in silicon

Electron beam induced current investigations of transition metal impurities at extended defects in silicon

The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful technique for studying gettering of impurities to extended defects, its high sensitivity allowing very low impurity concentrations to be studied. Extended defects, when studied by EBIC, normally exhibit one o...

書誌詳細
主要な著者:	Wilshaw, P, Fell, T
フォーマット:	Journal article
言語:	English
出版事項:	Electrochemical Soc Inc 1995

類似資料

Electron-beam-induced activity of defects in silicon
著者:: Wilshaw, P, 等
出版事項: (1994)

ELECTRON-BEAM-INDUCED ACTIVITY OF DEFECTS IN SILICON
著者:: Wilshaw, P, 等
出版事項: (1994)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
著者:: Fell, T, 等
出版事項: (1993)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
著者:: Fell, T, 等
出版事項: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
著者:: Fell, T, 等
出版事項: (1991)

Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation
著者:: Wilshaw, P, 等
出版事項: (1997)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
著者:: Wilshaw, P, 等
出版事項: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
著者:: Wilshaw, P, 等
出版事項: (1989)

Impurity locking of dislocations in silicon
著者:: Giannattasio, A, 等
出版事項: (2004)

GETTERING OF COPPER AND IRON TO EXTENDED SURFACE-DEFECTS IN SILICON
著者:: Decoteau, M, 等
出版事項: (1992)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
著者:: Decoteau, M, 等
出版事項: (1991)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
著者:: Decoteau, M, 等
出版事項: (1991)

Defect reactions and impurity control in silicon
著者:: Zhao, Song, 1964-
出版事項: (2005)

Impurity and defect mitigation for silicon photovoltaics
著者:: Martins, G
出版事項: (2016)

PRECIPITATION OF IRON IN SILICON - GETTERING TO EXTENDED SURFACE DEFECT SITES
著者:: Decoteau, M, 等
出版事項: (1991)

Dislocation locking by nitrogen impurities in FZ-silicon
著者:: Giannattasio, A, 等
出版事項: (2003)

THE EFFECT OF DIFFERENT TRANSITION-METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS
著者:: Fell, T, 等
出版事項: (1991)

Transition metal impurities in silicon: computational search for a semiconductor qubit
著者:: Cheng-Wei Lee, 等
出版事項: (2022-08-01)

AN ELECTRON-BEAM-INDUCED CURRENT STUDY OF DISLOCATIONS IN GAAS
著者:: Galloway, S, 等
出版事項: (1994)

Electron-beam-induced current study of dislocations in GaAs
著者:: Galloway, SA, 等
出版事項: (1994)

Transition metal impurities in semiconductors/
著者:: Omel'Yanovskii, E. M., 等
出版事項: (1986)

Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy
著者:: Sharifa B. Utamuradova, 等
出版事項: (2023-09-01)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
著者:: Fell, T, 等
出版事項: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
著者:: Fell, T, 等
出版事項: (1989)

'Semi-insulating' silicon using deep level impurity doping: problems and potential
著者:: Mallik, K, 等
出版事項: (2003)

High resolution deep level transient spectroscopy applied to extended defects in silicon
著者:: Evans-Freeman, J, 等
出版事項: (2005)

Imaging and quantifying carrier collection in silicon solar cells: a submicron study using electron beam induced current
著者:: Yu, M, 等
出版事項: (2020)

Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium
著者:: Khodjakbar S. Daliev, 等
出版事項: (2024-12-01)

Influence of growth impurities on thermal defect formation in monocrystalline silicon
著者:: Yu.V. Pavlovskyy, 等
出版事項: (2021-08-01)

The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon
著者:: Zeng, Z, 等
出版事項: (2011)

First-Principles Study of Metal Impurities in Silicon Carbide: Structural, Magnetic, and Electronic Properties
著者:: Lin Zhang, 等
出版事項: (2022-07-01)

Deep level impurity engineered semi-insulating Cz-silicon as microwave substrates
著者:: Mallik, K, 等
出版事項: (2011)

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
著者:: Wilshaw, P, 等
出版事項: (1989)

Electronic conductivity in metal-graphene composites: the role of disordered carbon structures, defects, and impurities
著者:: K Nepal, 等
出版事項: (2024-01-01)

Impurity-driven metal-insulator transitions in holography
著者:: Yunseok Seo, 等
出版事項: (2023-06-01)

EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
著者:: Wilshaw, P, 等
出版事項: (1991)

Atom probe Tomography of fast-diffusing impurities and the effect of gettering in multicrystalline silicon
著者:: Tweddle, D, 等
出版事項: (2018)

Investigation of Si Dendrites by Electron-Beam-Induced Current
著者:: Wei Yi, 等
出版事項: (2018-08-01)

Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers
著者:: Sung Yean Yoon, 等
出版事項: (2013-01-01)

An SEM EBIC study of the electronic properties of dislocations in silicon
著者:: Wilshaw, P, 等
出版事項: (1984)