III-V compound semiconductor nanowires
InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters...
| Main Authors: | , , , , , , , , |
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| Format: | Conference item |
| Published: |
2009
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