Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence

Gelijkaardige items

• Characterisation of epitaxial lateral overgrown GaN by electron backscatter diffraction correlated with cross-sectional cathodoluminescence spectroscopy
  door: Sweeney, F, et al.
  Gepubliceerd in: (2006)
• Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging
  door: Trager-Cowan, C, et al.
  Gepubliceerd in: (2006)
• Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging
  door: Trager-Cowan, C, et al.
  Gepubliceerd in: (2006)
• Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films
  door: Trager-Cowan, C, et al.
  Gepubliceerd in: (2007)
• High-resolution electron backscatter diffraction in III-nitride semiconductors
  door: Vilalta-Clemente, A, et al.
  Gepubliceerd in: (2015)