Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence
In this paper we describe the use of electron backscattered diffraction (EBSD) for the characterisation of nitride thin films, and report its use in the study of the spatial variation of strain across an epitaxially laterally overgrown GaN (ELOG) thin film. We also discuss the combination of lumines...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2002
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