Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
The structural and morphological characteristics of InAs/GaAs radial nanowire heterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the { 112 } A sidewalls of GaAs nanowires. This preferential depos...
| Main Authors: | , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2008
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