Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
The structural and morphological characteristics of InAs/GaAs radial nanowire heterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the { 112 } A sidewalls of GaAs nanowires. This preferential depos...
Full description
Bibliographic Details
| Main Authors: |
Paladugu, M,
Zou, J,
Guo, Y,
Zhang, X,
Joyce, H,
Gao, Q,
Tan, H,
Jagadish, C,
Kim, Y |
|---|
| Format: | Journal article
|
|---|
| Language: | English |
|---|
| Published: |
2008
|
|---|