Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
The structural and morphological characteristics of InAs/GaAs radial nanowire heterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the { 112 } A sidewalls of GaAs nanowires. This preferential depos...
| Main Authors: | , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2008
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| _version_ | 1797100452889755648 |
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| author | Paladugu, M Zou, J Guo, Y Zhang, X Joyce, H Gao, Q Tan, H Jagadish, C Kim, Y |
| author_facet | Paladugu, M Zou, J Guo, Y Zhang, X Joyce, H Gao, Q Tan, H Jagadish, C Kim, Y |
| author_sort | Paladugu, M |
| collection | OXFORD |
| description | The structural and morphological characteristics of InAs/GaAs radial nanowire heterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the { 112 } A sidewalls of GaAs nanowires. This preferential deposition leads to extraordinarily asymmetric InAs/GaAs radial nanowire heterostructures. Such formation of radial nanowire heterostructures provides an opportunity to engineer hierarchical nanostructures, which further widens the potential applications of semiconductor nanostructures. © 2008 American Institute of Physics. |
| first_indexed | 2024-03-07T05:37:43Z |
| format | Journal article |
| id | oxford-uuid:e47d7993-5d6a-4c10-94a3-f3c6a58217a1 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T05:37:43Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | oxford-uuid:e47d7993-5d6a-4c10-94a3-f3c6a58217a12022-03-27T10:17:03ZPolarity driven formation of InAs/GaAs hierarchical nanowire heterostructuresJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:e47d7993-5d6a-4c10-94a3-f3c6a58217a1EnglishSymplectic Elements at Oxford2008Paladugu, MZou, JGuo, YZhang, XJoyce, HGao, QTan, HJagadish, CKim, YThe structural and morphological characteristics of InAs/GaAs radial nanowire heterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the { 112 } A sidewalls of GaAs nanowires. This preferential deposition leads to extraordinarily asymmetric InAs/GaAs radial nanowire heterostructures. Such formation of radial nanowire heterostructures provides an opportunity to engineer hierarchical nanostructures, which further widens the potential applications of semiconductor nanostructures. © 2008 American Institute of Physics. |
| spellingShingle | Paladugu, M Zou, J Guo, Y Zhang, X Joyce, H Gao, Q Tan, H Jagadish, C Kim, Y Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures |
| title | Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures |
| title_full | Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures |
| title_fullStr | Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures |
| title_full_unstemmed | Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures |
| title_short | Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures |
| title_sort | polarity driven formation of inas gaas hierarchical nanowire heterostructures |
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