Reduction of dislocation mobility in GexSi1-x epilayers
A new method is presented that allows reduction in the dislocation mobility in GexSi1-x layers on Si by application of a load opposing the misfit stress in the layers. Results are given for layers with a Ge mole fraction x=0·016 and x = 0·022 and layer thicknesses of 0·42-0·9 μm.
| Main Authors: | , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1996
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