Reduction of dislocation mobility in GexSi1-x epilayers

A new method is presented that allows reduction in the dislocation mobility in GexSi1-x layers on Si by application of a load opposing the misfit stress in the layers. Results are given for layers with a Ge mole fraction x=0·016 and x = 0·022 and layer thicknesses of 0·42-0·9 μm.

Bibliographic Details
Main Authors: Jurkschat, K, Roberts, S
Format: Journal article
Language:English
Published: 1996
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author Jurkschat, K
Roberts, S
author_facet Jurkschat, K
Roberts, S
author_sort Jurkschat, K
collection OXFORD
description A new method is presented that allows reduction in the dislocation mobility in GexSi1-x layers on Si by application of a load opposing the misfit stress in the layers. Results are given for layers with a Ge mole fraction x=0·016 and x = 0·022 and layer thicknesses of 0·42-0·9 μm.
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spelling oxford-uuid:e5e0fd8e-65ca-4c81-aef8-f3221295d2012022-03-27T10:27:01ZReduction of dislocation mobility in GexSi1-x epilayersJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:e5e0fd8e-65ca-4c81-aef8-f3221295d201EnglishSymplectic Elements at Oxford1996Jurkschat, KRoberts, SA new method is presented that allows reduction in the dislocation mobility in GexSi1-x layers on Si by application of a load opposing the misfit stress in the layers. Results are given for layers with a Ge mole fraction x=0·016 and x = 0·022 and layer thicknesses of 0·42-0·9 μm.
spellingShingle Jurkschat, K
Roberts, S
Reduction of dislocation mobility in GexSi1-x epilayers
title Reduction of dislocation mobility in GexSi1-x epilayers
title_full Reduction of dislocation mobility in GexSi1-x epilayers
title_fullStr Reduction of dislocation mobility in GexSi1-x epilayers
title_full_unstemmed Reduction of dislocation mobility in GexSi1-x epilayers
title_short Reduction of dislocation mobility in GexSi1-x epilayers
title_sort reduction of dislocation mobility in gexsi1 x epilayers
work_keys_str_mv AT jurkschatk reductionofdislocationmobilityingexsi1xepilayers
AT robertss reductionofdislocationmobilityingexsi1xepilayers