Reduction of dislocation mobility in GexSi1-x epilayers
A new method is presented that allows reduction in the dislocation mobility in GexSi1-x layers on Si by application of a load opposing the misfit stress in the layers. Results are given for layers with a Ge mole fraction x=0·016 and x = 0·022 and layer thicknesses of 0·42-0·9 μm.
Main Authors: | , |
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Format: | Journal article |
Language: | English |
Published: |
1996
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_version_ | 1797100741960138752 |
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author | Jurkschat, K Roberts, S |
author_facet | Jurkschat, K Roberts, S |
author_sort | Jurkschat, K |
collection | OXFORD |
description | A new method is presented that allows reduction in the dislocation mobility in GexSi1-x layers on Si by application of a load opposing the misfit stress in the layers. Results are given for layers with a Ge mole fraction x=0·016 and x = 0·022 and layer thicknesses of 0·42-0·9 μm. |
first_indexed | 2024-03-07T05:41:55Z |
format | Journal article |
id | oxford-uuid:e5e0fd8e-65ca-4c81-aef8-f3221295d201 |
institution | University of Oxford |
language | English |
last_indexed | 2024-03-07T05:41:55Z |
publishDate | 1996 |
record_format | dspace |
spelling | oxford-uuid:e5e0fd8e-65ca-4c81-aef8-f3221295d2012022-03-27T10:27:01ZReduction of dislocation mobility in GexSi1-x epilayersJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:e5e0fd8e-65ca-4c81-aef8-f3221295d201EnglishSymplectic Elements at Oxford1996Jurkschat, KRoberts, SA new method is presented that allows reduction in the dislocation mobility in GexSi1-x layers on Si by application of a load opposing the misfit stress in the layers. Results are given for layers with a Ge mole fraction x=0·016 and x = 0·022 and layer thicknesses of 0·42-0·9 μm. |
spellingShingle | Jurkschat, K Roberts, S Reduction of dislocation mobility in GexSi1-x epilayers |
title | Reduction of dislocation mobility in GexSi1-x epilayers |
title_full | Reduction of dislocation mobility in GexSi1-x epilayers |
title_fullStr | Reduction of dislocation mobility in GexSi1-x epilayers |
title_full_unstemmed | Reduction of dislocation mobility in GexSi1-x epilayers |
title_short | Reduction of dislocation mobility in GexSi1-x epilayers |
title_sort | reduction of dislocation mobility in gexsi1 x epilayers |
work_keys_str_mv | AT jurkschatk reductionofdislocationmobilityingexsi1xepilayers AT robertss reductionofdislocationmobilityingexsi1xepilayers |