Direct-write non-linear photolithography for semiconductor nanowire characterization.

Direct-write non-linear photolithography for semiconductor nanowire characterization.

A practical bottleneck prohibiting the rapid, confident and damage-free electrical contacting of vapour-liquid-solid grown nanowires arises from the random spatial distribution and variation in quality of the nanowires, and the contact dimensions required. Established techniques such as electron-bea...

Descripció completa

Dades bibliogràfiques
Autors principals:	Parkinson, P, Jiang, N, Gao, Q, Tan, H, Jagadish, C
Format:	Journal article
Idioma:	English
Publicat:	IOP Publishing 2012

Ítems similars

Non-linear direct-laser-write lithography for semiconductor nanowire characterisation
per: Parkinson, P, et al.
Publicat: (2012)

III-V semiconductor nanowires for optoelectronic device applications
per: Mokkapati, S, et al.
Publicat: (2013)

Polarization tunable, multicolor emission from core-shell photonic III-V semiconductor nanowires.
per: Mokkapati, S, et al.
Publicat: (2012)

Characterization of semiconductor nanowires using optical tweezers
per: Reece, Peter J., et al.
Publicat: (2011)

III-V semiconductor nanowires for optoelectronic device applications
per: Joyce, H, et al.
Publicat: (2011)

III-V semiconductor nanowires for optoelectronic device applications
per: Joyce, H, et al.
Publicat: (2011)

III-V compound semiconductor nanowires
per: Paiman, S, et al.
Publicat: (2009)

Ultrafast dynamics of exciton formation in semiconductor nanowires.
per: Yong, C, et al.
Publicat: (2012)

III-V compound semiconductor nanowires
per: Joyce, H, et al.
Publicat: (2009)

Compound semiconductor nanowires for optoelectronic device applications
per: Gao, Q, et al.
Publicat: (2011)

Direct-Write Photolithography for Cylindrical Tooling Fabrication in Roll-to-Roll Microcontact Printing
per: Nietner, Larissa Franciska, et al.
Publicat: (2017)

ZnO Nanowire-Anchored Microfluidic Device With Herringbone Structure Fabricated by Maskless Photolithography
per: Dilshan Sooriyaarachchi, et al.
Publicat: (2020-07-01)

Growth and characterization of GaAs1and#x2212;xSbx nanowires
per: Yuan, X, et al.
Publicat: (2012)

Optically pumped room-temperature GaAs nanowire lasers
per: Saxena, D, et al.
Publicat: (2013)

III-V compound semiconductor nanowires for optoelectronic device applications
per: Gao, Q, et al.
Publicat: (2011)

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
per: Gao, Q, et al.
Publicat: (2009)

Picosecond carrier lifetime measurements on a single GaAs Nanowire
per: Parkinson, P, et al.
Publicat: (2012)

III-V nanowires for optoelectronic applications
per: Tan, H, et al.
Publicat: (2012)

Direct Photolithography of WOx Nanoparticles for High-Resolution Non-Emissive Displays
per: Chang Gu, et al.
Publicat: (2024-11-01)

High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
per: Jiang, N, et al.
Publicat: (2013)

Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy
per: Joyce, H, et al.
Publicat: (2013)

Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires
per: Nian Jiang, et al.
Publicat: (2020-12-01)

Transient terahertz conductivity of GaAs nanowires
per: Parkinson, P, et al.
Publicat: (2007)

InP nanowires grown by SA-MOVPE
per: Gao, Q, et al.
Publicat: (2012)

Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
per: Jiang, N, et al.
Publicat: (2012)

An ultrafast switchable terahertz polarization modulator based on III--V semiconductor nanowires
per: Baig, S, et al.
Publicat: (2017)

Growth of InP nanowires on silicon using a thin buffer layer
per: Fonseka, H, et al.
Publicat: (2012)

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires
per: Jiang, N, et al.
Publicat: (2012)

Directional charge separation in isolated organic semiconductor crystalline nanowires
per: J. A. Labastide, et al.
Publicat: (2016-02-01)

Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.
per: Joyce, H, et al.
Publicat: (2014)

Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition
per: Joyce, H, et al.
Publicat: (2007)

Outliers Detection Models in Shewhart Control Charts; an Application in Photolithography: A Semiconductor Manufacturing Industry
per: Ishaq Adeyanju Raji, et al.
Publicat: (2020-05-01)

Single Nanowire Photoconductive Terahertz Detectors.
per: Peng, K, et al.
Publicat: (2014)

Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures
per: Joyce, H, et al.
Publicat: (2007)

Structural and optical properties of III-V nanowires and nanowire heterostructures grown by metalorganic chemical vapour deposition
per: Joyce, H, et al.
Publicat: (2007)

Cycle Time Analysis For Photolithography Tools In Semiconductor Manufacturing Industry With Simulation Model: A Case Study
per: Siow, Yuen Tien
Publicat: (2008)

Reconfigurable phase-change photomask for grayscale photolithography
per: Wang, Q., et al.
Publicat: (2019)

Optoelectronic properties of GaAs nanowire photodetector
per: Wang, H, et al.
Publicat: (2012)

Modulation of terahertz polarization on picosecond timescales using polymer-encapsulated semiconductor nanowires
per: Baig, SA, et al.
Publicat: (2017)

Impact of the Tip-to-Semiconductor Contact in the Electrical Characterization of Nanowires
per: Juliane Koch, et al.
Publicat: (2024-01-01)