Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates

We investigate the atomic scale structure of m-plane InGaN quantum wells grown on bulk m-plane GaN templates and reveal that as the indium content increases there is an increased tendency for nonrandom clustering of indium atoms to occur. Based on the atom probe tomography data used to reveal this c...

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Bibliographic Details
Main Authors: Tang, F, Zhu, T, Fu, W, Oehler, F, Zhang, S, Griffiths, J, Humphreys, C, Martin, T, Bagot, P, Moody, M, Patra, S, Schulz, S, Dawson, P, Church, S, Jacobs, J, Oliver, R
Format: Journal article
Published: AIP Publishing 2019