Enhancement of resistivity of Czochralski silicon by deep level manganese doping
Deep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm-2 of Mn at 100 keV followed by rapid thermal annealing at 800 °C for 36 s. The re...
| Main Authors: | , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
2006
|