Enhancement of resistivity of Czochralski silicon by deep level manganese doping
Deep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm-2 of Mn at 100 keV followed by rapid thermal annealing at 800 °C for 36 s. The re...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2006
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| Summary: | Deep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm-2 of Mn at 100 keV followed by rapid thermal annealing at 800 °C for 36 s. The resistivity of the wafer is enhanced from 600 Ω cm for the undoped substrate to a maximum of 10 kΩ cm for the Mn-doped substrate. The experimental data are corroborated using a theoretical model for doping compensation due to deep level impurities. This level of obtained resistivity is suitable for making silicon on-chip integration of radio frequency devices. © 2006 American Institute of Physics. |
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