Enhancement of resistivity of Czochralski silicon by deep level manganese doping
Deep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm-2 of Mn at 100 keV followed by rapid thermal annealing at 800 °C for 36 s. The re...
| Hlavní autoři: | , , , |
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| Médium: | Journal article |
| Jazyk: | English |
| Vydáno: |
2006
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| _version_ | 1826302469540413440 |
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| author | Mallik, K Groot, d Ashburn, P Wilshaw, P |
| author_facet | Mallik, K Groot, d Ashburn, P Wilshaw, P |
| author_sort | Mallik, K |
| collection | OXFORD |
| description | Deep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm-2 of Mn at 100 keV followed by rapid thermal annealing at 800 °C for 36 s. The resistivity of the wafer is enhanced from 600 Ω cm for the undoped substrate to a maximum of 10 kΩ cm for the Mn-doped substrate. The experimental data are corroborated using a theoretical model for doping compensation due to deep level impurities. This level of obtained resistivity is suitable for making silicon on-chip integration of radio frequency devices. © 2006 American Institute of Physics. |
| first_indexed | 2024-03-07T05:48:01Z |
| format | Journal article |
| id | oxford-uuid:e7e090cf-b917-4137-9ec6-482ee87d6e45 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T05:48:01Z |
| publishDate | 2006 |
| record_format | dspace |
| spelling | oxford-uuid:e7e090cf-b917-4137-9ec6-482ee87d6e452022-03-27T10:42:21ZEnhancement of resistivity of Czochralski silicon by deep level manganese dopingJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:e7e090cf-b917-4137-9ec6-482ee87d6e45EnglishSymplectic Elements at Oxford2006Mallik, KGroot, dAshburn, PWilshaw, PDeep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm-2 of Mn at 100 keV followed by rapid thermal annealing at 800 °C for 36 s. The resistivity of the wafer is enhanced from 600 Ω cm for the undoped substrate to a maximum of 10 kΩ cm for the Mn-doped substrate. The experimental data are corroborated using a theoretical model for doping compensation due to deep level impurities. This level of obtained resistivity is suitable for making silicon on-chip integration of radio frequency devices. © 2006 American Institute of Physics. |
| spellingShingle | Mallik, K Groot, d Ashburn, P Wilshaw, P Enhancement of resistivity of Czochralski silicon by deep level manganese doping |
| title | Enhancement of resistivity of Czochralski silicon by deep level manganese doping |
| title_full | Enhancement of resistivity of Czochralski silicon by deep level manganese doping |
| title_fullStr | Enhancement of resistivity of Czochralski silicon by deep level manganese doping |
| title_full_unstemmed | Enhancement of resistivity of Czochralski silicon by deep level manganese doping |
| title_short | Enhancement of resistivity of Czochralski silicon by deep level manganese doping |
| title_sort | enhancement of resistivity of czochralski silicon by deep level manganese doping |
| work_keys_str_mv | AT mallikk enhancementofresistivityofczochralskisiliconbydeeplevelmanganesedoping AT grootd enhancementofresistivityofczochralskisiliconbydeeplevelmanganesedoping AT ashburnp enhancementofresistivityofczochralskisiliconbydeeplevelmanganesedoping AT wilshawp enhancementofresistivityofczochralskisiliconbydeeplevelmanganesedoping |