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ADSORPTION, ETCHING AND PHOTOINDUCED REACTIONS AT THE SI(100)-CCL4 INTERFACE

ADSORPTION, ETCHING AND PHOTOINDUCED REACTIONS AT THE SI(100)-CCL4 INTERFACE

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Detalles Bibliográficos
Main Authors: French, C, Jackman, R, Price, R, Foord, J
Formato: Journal article
Publicado: 1989
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Adsorption, etching and photo-induced reactions at the Si(100)-CCl 4 interface

Adsorption, etching and photo-induced reactions at the Si(100)-CCl 4 interface por French, C, Jackman, R, Price, R, Foord, J

Publicado 1989
Journal article
Show all versions (2)

Títulos similares

  • Adsorption, etching and photo-induced reactions at the Si(100)-CCl 4 interface
    por: French, C, et al.
    Publicado: (1989)
  • REACTION-MECHANISMS FOR THE PHOTON-ENHANCED ETCHING OF SEMICONDUCTORS - AN INVESTIGATION OF THE UV-STIMULATED INTERACTION OF CHLORINE WITH SI(100)
    por: Jackman, R, et al.
    Publicado: (1986)
  • CHEMICAL PRECURSORS FOR GAAS ETCHING WITH LOW-ENERGY ION-BEAMS - CHLORINE ADSORPTION ON GAAS(100)
    por: Jackman, R, et al.
    Publicado: (1991)
  • Surface studies of the interaction of Cl2 with InP(100)(4 × 2); an investigation of adsorption, thermal etching and ion beam assisted processes
    por: Murrell, A, et al.
    Publicado: (1990)
  • SURFACE STUDIES OF THE INTERACTION OF CL-2 WITH INP(100)(4X2) - AN INVESTIGATION OF ADSORPTION, THERMAL ETCHING AND ION-BEAM ASSISTED PROCESSES
    por: Murrell, A, et al.
    Publicado: (1990)

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