Hot carrier relaxation by extreme electron-LO phonon scattering in GaN

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN

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Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. I...

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Chi tiết về thư mục
Những tác giả chính: Hess, S, Taylor, R, O'Sullivan, E, Ryan, J, Cain, N, Roberts, V, Roberts, J
Định dạng: Conference item
Được phát hành: 1999
Miêu tả
Tóm tắt:Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. In a preliminary Monte Carlo study we have simulations which reproduce the major experimental observations, confirming the development of a non-thermal electron distribution near E-LO due to the strong electron-LO phonon interaction. Hot phonon effects are pronounced at high carrier densities.

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