Hot carrier relaxation by extreme electron-LO phonon scattering in GaN

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN

Zobrazit další vydání (1)

Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. I...

Podrobná bibliografie
Hlavní autoři:	Hess, S, Taylor, R, O'Sullivan, E, Ryan, J, Cain, N, Roberts, V, Roberts, J
Médium:	Conference item
Vydáno:	1999

Podobné jednotky

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
Autor: Hess, S, a další
Vydáno: (1999)

Hot carrier relaxation in GaN : LO phonon scattering and excitonic effects
Autor: O'Sullivan, E, a další
Vydáno: (1999)

Hot carrier relaxation in GaN:LO phonon scattering and excitonic effects
Autor: O'Sullivan, E, a další
Vydáno: (1999)

Hot phonons and non-thermal carrier states in GaN
Autor: Kyhm, K, a další
Vydáno: (2002)

Hot phonons and non-thermal carrier states in GaN
Autor: Kyhm, K, a další
Vydáno: (2002)

Hot carrier dynamics and carrier-phonon interaction in GaN
Autor: Kyhm, K, a další
Vydáno: (2005)

The role of nonequilibrium LO phonons, Pauli exclusion, and intervalley pathways on the relaxation of hot carriers in InGaAs/InGaAsP multi-quantum-wells
Autor: Yongjie Zou, a další
Vydáno: (2023-04-01)

Current relaxation due to hot carrier scattering in graphene
Autor: Dong Sun, a další
Vydáno: (2012-01-01)

Time-resolved bandgap renormalization and gain in GaN epilayers
Autor: Hess, S, a další
Vydáno: (1998)

Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN
Autor: Celik Ozlem, a další
Vydáno: (2012-04-01)

Modeling phonon thermal conductivity in spatially confined GaN nanofilms under stress fields and phonon surface scattering
Autor: Linli Zhu, a další
Vydáno: (2019-01-01)

Matryoshka phonon twinning in α-GaN
Autor: Bin Wei, a další
Vydáno: (2021-10-01)

Time-resolved spectroscopy of non-thermal carrier dynamics in GaN
Autor: Kyhm, K, a další
Vydáno: (2006)

Time-resolved spectroscopy of non-thermal carrier dynamics in GaN
Autor: Kyhm, K, a další
Vydáno: (2006)

Direct observation of femtosecond intervalley scattering in GaSb: Electron-phonon scattering and continuum coherent transients
Autor: Smith, D, a další
Vydáno: (1997)

Potential of TiN/GaN Heterostructures for Hot Carrier Generation and Collection
Autor: Blake S. Simpkins, a další
Vydáno: (2022-03-01)

MEASUREMENTS OF HOT CARRIER RELAXATION AND RECOMBINATION IN GaAs QUANTUM WELLS BY PICOSECOND OPTICAL PROBING.
Autor: Ryan, J, a další
Vydáno: (1984)

Phonon dispersion of buckled two-dimensional GaN
Autor: Zhenyu Zhang, a další
Vydáno: (2024-11-01)

Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution
Autor: Holmes, M, a další
Vydáno: (2012)

Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution
Autor: Holmes, M, a další
Vydáno: (2012)

M-plane GaN terahertz quantum cascade laser structure design and doping effect for resonant-phonon and phonon-scattering-injection schemes
Autor: Fan Ye, a další
Vydáno: (2023-07-01)

Ultra-Short Lifetime of Intersubband Electrons in Resonance to GaN-Based LO-Phonons at 92 meV
Autor: Daniel Hofstetter, a další
Vydáno: (2023-08-01)

Ultrafast relaxation of hot phonons in graphene-hBN heterostructures
Autor: Dheeraj Golla, a další
Vydáno: (2017-05-01)

Fabrication and Characterization of Nano-porous GaN Template for Strain Relaxed GaN Growth
Autor: Hartono, Haryono, a další
Vydáno: (2007)

COMPETITION BETWEEN LO AND TO PHONON-SCATTERING IN GAAS/GAALAS HETEROJUNCTIONS
Autor: Brummell, M, a další
Vydáno: (1988)

Resonant LO phonon enhanced conductivity in GaAs-AlAs superlattices
Autor: Dalton, K, a další
Vydáno: (2001)

Investigation of inter-valley scattering and hot phonon dynamics in GaAs quantum wells using femtosecond luminescence intensity correlation
Autor: de Paula, A, a další
Vydáno: (1989)

Dephasing by optical phonons in GaN defect single-photon emitters
Autor: Yifei Geng, a další
Vydáno: (2023-05-01)

Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
Autor: Kihoon Park, a další
Vydáno: (2018-10-01)

Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors
Autor: Dreyer, Cyrus E., a další
Vydáno: (2017)

CARRIER-CONCENTATION-DEPENDENT ELECTRON LO-PHONON COUPLING OBSERVED IN GAAS-(GA,AL)AS HETEROJUNCTIONS BY RESONANT-POLARON CYCLOTRON-RESONANCE
Autor: Langerak, C, a další
Vydáno: (1988)

Interband excitation and carrier relaxation as displacive driving force for coherent phonons
Autor: Garcia M.E., a další
Vydáno: (2013-03-01)

Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs
Autor: Seong-In Cho, a další
Vydáno: (2022-05-01)

Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces
Autor: Mohamadali Malakoutian, a další
Vydáno: (2025-01-01)

Spin injection, relaxation, and manipulation in GaN-based semiconductors
Autor: Zhenhao Sun, a další
Vydáno: (2023-12-01)

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
Autor: Jun-Yong Lu, a další
Vydáno: (2011-09-01)

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
Autor: Park, Y, a další
Vydáno: (2018)

Quantifying the Plasmonic Generation Rate of Non‐Thermal Hot Carriers with an AlGaN/GaN High‐Electron‐Mobility Transistor
Autor: Chun‐Yu Li, a další
Vydáno: (2021-07-01)

Resonant Raman Scattering in Boron-Implanted GaN
Autor: Yi Peng, a další
Vydáno: (2022-01-01)

Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot
Autor: Leon C. Camenzind, a další
Vydáno: (2018-08-01)