Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. I...
| Главные авторы: | , , , , , , |
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| Формат: | Conference item |
| Опубликовано: |
1999
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Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
Опубликовано 1999
Journal article