APPLICATION OF TRANSMISSION ION CHANNELING TO THE IMAGING OF STACKING-FAULTS
The Nuclear Microprobe at the University of Oxford has been employed to produce images of crystal defects using transmission ion channeling This paper describes the experimental set-up for the technique and shows how images of stacking faults near the surface of a 40 mu m thick silicon crystal can b...
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| Format: | Conference item |
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1995
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| _version_ | 1826302706154733568 |
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| author | King, P Breese, M Wilshaw, P Grime, G |
| author_facet | King, P Breese, M Wilshaw, P Grime, G |
| author_sort | King, P |
| collection | OXFORD |
| description | The Nuclear Microprobe at the University of Oxford has been employed to produce images of crystal defects using transmission ion channeling This paper describes the experimental set-up for the technique and shows how images of stacking faults near the surface of a 40 mu m thick silicon crystal can be generated, The invisibility of faults for certain planar channeling directions produces information on the nature of these defects. For the faults that are visible, the choice of channeling direction affects the image contrast. It is estimated that faults at least 10 mu m below the surface of the sample would be detectable for the analysing beam of 3 MeV protons. |
| first_indexed | 2024-03-07T05:51:37Z |
| format | Conference item |
| id | oxford-uuid:e9143e1f-c943-4bba-bb7d-b76ab44a24ea |
| institution | University of Oxford |
| last_indexed | 2024-03-07T05:51:37Z |
| publishDate | 1995 |
| record_format | dspace |
| spelling | oxford-uuid:e9143e1f-c943-4bba-bb7d-b76ab44a24ea2022-03-27T10:51:36ZAPPLICATION OF TRANSMISSION ION CHANNELING TO THE IMAGING OF STACKING-FAULTSConference itemhttp://purl.org/coar/resource_type/c_5794uuid:e9143e1f-c943-4bba-bb7d-b76ab44a24eaSymplectic Elements at Oxford1995King, PBreese, MWilshaw, PGrime, GThe Nuclear Microprobe at the University of Oxford has been employed to produce images of crystal defects using transmission ion channeling This paper describes the experimental set-up for the technique and shows how images of stacking faults near the surface of a 40 mu m thick silicon crystal can be generated, The invisibility of faults for certain planar channeling directions produces information on the nature of these defects. For the faults that are visible, the choice of channeling direction affects the image contrast. It is estimated that faults at least 10 mu m below the surface of the sample would be detectable for the analysing beam of 3 MeV protons. |
| spellingShingle | King, P Breese, M Wilshaw, P Grime, G APPLICATION OF TRANSMISSION ION CHANNELING TO THE IMAGING OF STACKING-FAULTS |
| title | APPLICATION OF TRANSMISSION ION CHANNELING TO THE IMAGING OF STACKING-FAULTS |
| title_full | APPLICATION OF TRANSMISSION ION CHANNELING TO THE IMAGING OF STACKING-FAULTS |
| title_fullStr | APPLICATION OF TRANSMISSION ION CHANNELING TO THE IMAGING OF STACKING-FAULTS |
| title_full_unstemmed | APPLICATION OF TRANSMISSION ION CHANNELING TO THE IMAGING OF STACKING-FAULTS |
| title_short | APPLICATION OF TRANSMISSION ION CHANNELING TO THE IMAGING OF STACKING-FAULTS |
| title_sort | application of transmission ion channeling to the imaging of stacking faults |
| work_keys_str_mv | AT kingp applicationoftransmissionionchannelingtotheimagingofstackingfaults AT breesem applicationoftransmissionionchannelingtotheimagingofstackingfaults AT wilshawp applicationoftransmissionionchannelingtotheimagingofstackingfaults AT grimeg applicationoftransmissionionchannelingtotheimagingofstackingfaults |