OPTICAL SPECTROSCOPY OF GAAS IN THE EXTREME QUANTUM LIMIT - INTEGER AND FRACTIONAL QUANTUM HALL-EFFECT, AND ONSET OF THE ELECTRON SOLID

OPTICAL SPECTROSCOPY OF GAAS IN THE EXTREME QUANTUM LIMIT - INTEGER AND FRACTIONAL QUANTUM HALL-EFFECT, AND ONSET OF THE ELECTRON SOLID

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Our recent optical detection of the integer and fractional quantum Hall effects in GaAs, by intrinsic band-gap photoluminescence at dilution refrigerator temperatures, is reviewed. This work has been extended to the extreme quantum limit where a photoluminescence peak develops close to Landau level...

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Մատենագիտական մանրամասներ
Հիմնական հեղինակներ: Clark, R, Ford, R, Haynes, S, Ryan, J, Turberfield, A, Wright, P, Williams, F, Deville, G, Glattli, D, Mallett, J, Vanderburgt, M, Oswald, P, Herlach, F, Foxon, C, Harris, J
Ձևաչափ: Conference item
Հրապարակվել է: Elsevier 1991
Նկարագրություն
Ամփոփում:Our recent optical detection of the integer and fractional quantum Hall effects in GaAs, by intrinsic band-gap photoluminescence at dilution refrigerator temperatures, is reviewed. This work has been extended to the extreme quantum limit where a photoluminescence peak develops close to Landau level filling factor ν = 1/5 which correlates both with the onset of threshold behaviour in current-voltage characteristics of the two-dimensional electron system and a resonant radio-frequency absorption; the latter are quantitatively accounted for by a model of crystalline electronic structure broken up into domains. Preliminary mK transport experiments in intense, pulsed magnetic fields are also described, which establish a basis to access the electron solid phase transition in a hitherto unattainable region of the (B, T) plane.

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