Rapid patterning of single-wall carbon nanotubes by interlayer lithography.
High resolution patterning of single-wall carbon nanotubes is achieved using interlayer lithography. Minimum feature sizes of 6 and 0.7 μm are demonstrated on glass and silicon, using the negative photoresist SU-8 and the positive photoresist AZ7220, respectively. Films patterned using SU-8 have a g...
| Päätekijät: | , , , , , , , , |
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| Aineistotyyppi: | Journal article |
| Kieli: | English |
| Julkaistu: |
2010
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