Electron channeling and ion channeling contrast imaging of dislocations in nitride thin films

Electron channeling and ion channeling contrast imaging of dislocations in nitride thin films

Bibliografski detalji
Glavni autori:	Trager-Cowan, C, Edwards, P, Dynowski, F, Sweeney, F, Wilkinson, A, Winkelmann, A, Day, A, Wang, T, Parbrook, P, Watson, I, Joy, D
Format:	Journal article
Izdano:	2008

Slični predmeti

Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films
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Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging
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Effects of surface relaxation on electron channelling contrast images of misfit dislocations
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od: Sweeney, F, i dr.
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Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence
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od: Breese, M, i dr.
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od: Wilkinson, A, i dr.
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od: Ishii, Akio, i dr.
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"Conjugate channeling" effect in dislocation core diffusion: carbon transport in dislocated BCC iron.
od: Akio Ishii, i dr.
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Transparent amorphous silicon channel waveguides with silicon nitride intercladding layer
od: Sun, Rong, i dr.
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Simulation of channeling contrast in scanning ion microscope images
od: Kaoru Ohya
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Direct observation of depth-dependent atomic displacements associated with dislocations in gallium nitride.
od: Lozano, J, i dr.
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Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging
od: Wilkinson, A
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MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC
od: Ourmazd, A, i dr.
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Injection velocity in thin-channel InAs HEMTs
od: Kim, Tae-Woo, i dr.
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Boron nitride quantum dots modified carbon-defects ultra-thin porous carbon nitride: double channels and quantum size effects facilitate photogenerated carrier migration and exciton dissociation
od: Chugeng Huang, i dr.
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Introduction
od: Trager-Cowan, C, i dr.
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Transverse flow in thin superhydrophobic channels
od: Feuillebois, Francois, i dr.
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DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
od: Wilshaw, P, i dr.
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