Electron channeling and ion channeling contrast imaging of dislocations in nitride thin films

Electron channeling and ion channeling contrast imaging of dislocations in nitride thin films

Bibliographic Details
Main Authors:	Trager-Cowan, C, Edwards, P, Dynowski, F, Sweeney, F, Wilkinson, A, Winkelmann, A, Day, A, Wang, T, Parbrook, P, Watson, I, Joy, D
Format:	Journal article
Published:	2008

Similar Items

Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films
by: Trager-Cowan, C, et al.
Published: (2007)

Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging
by: Trager-Cowan, C, et al.
Published: (2006)

Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging
by: Trager-Cowan, C, et al.
Published: (2006)

Rapid nondestructive analysis of threading dislocations in wurtzite materials using the scanning electron microscope.
by: Naresh-Kumar, G, et al.
Published: (2012)

Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films
by: Wilkinson, A, et al.
Published: (2016)

THE EFFECTS OF SURFACE STRESS-RELAXATION ON ELECTRON CHANNELING CONTRAST IMAGES OF DISLOCATIONS
by: Wilkinson, A, et al.
Published: (1995)

Effects of surface relaxation on electron channelling contrast images of misfit dislocations
by: Wilkinson, A, et al.
Published: (1994)

Electron channelling contrast imaging of dislocation substructures in the vicinity of short fatigue cracks in Cu
by: Ahmed, J, et al.
Published: (1998)

Multiple scattering simulation of electron channelling contrast images of dislocations at interfaces
by: Dudarev, S, et al.
Published: (1995)

Examination of dislocation substructures in fatigued Cu using electron channelling contrast imaging
by: Ahmed, J, et al.
Published: (1999)

High-resolution electron backscatter diffraction in III-nitride semiconductors
by: Vilalta-Clemente, A, et al.
Published: (2015)

Characterizing dislocation structure evolution during cyclic deformation using electron channelling contrast imaging
by: Ahmed, J, et al.
Published: (2006)

ELECTRON CHANNELING CONTRAST IMAGING (ECCI) OF DISLOCATIONS IN BULK SPECIMENS
by: Czernuszka, J, et al.
Published: (1991)

Characterisation of epitaxial lateral overgrown GaN by electron backscatter diffraction correlated with cross-sectional cathodoluminescence spectroscopy
by: Sweeney, F, et al.
Published: (2006)

Study of dislocation structures near fatigue cracks using electron channelling contrast imaging technique (ECCI).
by: Ahmed, J, et al.
Published: (1999)

Characterizing dislocation structures in bulk fatigued copper single crystals using electron channelling contrast imaging (ECCI)
by: Ahmed, J, et al.
Published: (1997)

Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence
by: Trager-Cowan, C, et al.
Published: (2002)

Electron channelling contrast imaging characterization of dislocation structures associated with extrusion and intrusion systems and fatigue cracks in copper single crystals
by: Ahmed, J, et al.
Published: (2001)

ELECTRON CHANNELING CONTRAST IMAGING OF DEFECTS IN SEMICONDUCTORS
by: Wilkinson, A, et al.
Published: (1993)

Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism
by: Gregor Hlawacek, et al.
Published: (2012-07-01)

Transmission ion channeling analysis of isolated 60 degrees misfit dislocations
by: Breese, M, et al.
Published: (2005)

ELECTRON CHANNELING CONTRAST IMAGING OF INTERFACIAL DEFECTS IN STRAINED SILICON-GERMANIUM LAYERS ON SILICON
by: Wilkinson, A, et al.
Published: (1993)

DISLOCATION IMAGING WITH A SCANNING PROTON MICROPROBE USING CHANNELING SCANNING-TRANSMISSION ION MICROSCOPY (CSTIM)
by: King, P, et al.
Published: (1993)

“Conjugate Channeling” Effect in Dislocation Core Diffusion: Carbon Transport in Dislocated BCC Iron
by: Ishii, Akio, et al.
Published: (2013)

p-Channel gallium nitride transistor on Si substrate
by: Chowdhury, Nadim
Published: (2019)

One-dimensional hexagonal boron nitride conducting channel
by: Park, Hyo Ju, et al.
Published: (2020)

Simulation of channeling contrast in scanning ion microscope images
by: Kaoru Ohya
Published: (2018-01-01)

Transparent amorphous silicon channel waveguides with silicon nitride intercladding layer
by: Sun, Rong, et al.
Published: (2013)

Direct observation of depth-dependent atomic displacements associated with dislocations in gallium nitride.
by: Lozano, J, et al.
Published: (2014)

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC
by: Ourmazd, A, et al.
Published: (1982)

Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging
by: Wilkinson, A
Published: (1996)

Injection velocity in thin-channel InAs HEMTs
by: Kim, Tae-Woo, et al.
Published: (2012)

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
by: Wilshaw, P, et al.
Published: (1986)

Introduction
by: Trager-Cowan, C, et al.
Published: (2008)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
by: Ourmazd, A, et al.
Published: (1983)

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
by: Ourmazd, A, et al.
Published: (1983)

Transverse flow in thin superhydrophobic channels
by: Feuillebois, Francois, et al.
Published: (2011)

Boron nitride quantum dots modified carbon-defects ultra-thin porous carbon nitride: double channels and quantum size effects facilitate photogenerated carrier migration and exciton dissociation
by: Chugeng Huang, et al.
Published: (2023-01-01)

Intracellular Ion Channels in Pancreas Cancer
by: Sameer H. Patel, et al.
Published: (2019-12-01)

Ion channels in lymphocytes.
by: Ashcroft, F
Published: (1984)