Magneto-luminescence of quasi-zero dimensional In0.25Ga0.75As/GaAs quantum dots
We report photoluminescence measurements on In0.25Ga0.75As/GaAs quantum well and dots grown on (1 1 1)B GaAs substrate in high magnetic fields up to 45 Tesla. A well-defined PL line with full width at half maximum of approximately 5.5 meV is observed. From an analysis of the zero field transition en...
Главные авторы: | Cheng, H, Nicholas, R, Priest, A, Tsai, F, Lee, C, Sanchez-Dehesa, J |
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Формат: | Conference item |
Опубликовано: |
1998
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