Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm.

Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm.

The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device...

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מידע ביבליוגרפי
Main Authors: Hiskett, P, Buller, G, Loudon, A, Smith, J, Gontijo, I, Walker, A, Townsend, P, Robertson, M
פורמט: Journal article
שפה:English
יצא לאור: 2000

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